High efficiency n-type silicon solar cells featuring passivated contact to laser doped regions
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A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells
Advances in the efficiency of crystalline silicon (c-Si) photovoltaic (PV) devices above the long-held record efficiency value of 25% have all come from solar cell architectures with passivated contacts fabricated on n-type silicon.[1] The most successful devices to date have a silicon heterojunction (SHJ) cell structure, featuring a thin intrinsic amorphous silicon (a-Si) film that passivates ...
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Direct metallization of lightly doped n-type crystalline silicon (c-Si) is known to routinely produce non-Ohmic (rectifying) contact behaviour. This has inhibited the development of n-type c-Si solar cells with partial rear contacts, an increasingly popular cell design for high performance p-type c-Si solar cells. In this contribution we demonstrate that low resistance Ohmic contact to n-type c...
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